2008. 5. 27 1/4 semiconductor technical data kmb4d5dn60qa dual n-ch trench mosfet revision no : 0 general description this trench mosfet has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristiscs. it is mainly suitable for load switch and back light inverter. features h v dss =60v, i d =4.5a. h drain-source on resistance. r ds(on) =56m ? (max.) @ v gs =10v r ds(on) =77m ? (max.) @ v gs =4.5v mosfet maximum ratings (ta=25 ? unless otherwise noted) flp-8 0.20+0.1/-0.05 p t 1.27 u 0.1 max millimeters 0.4 0.1 0.15+0.1/-0.05 4.85 0.2 b2 g h l d a b1 dim 6.02 0.3 1.63 0.2 0.65 0.2 3.94 0.2 + _ + _ + _ + _ + _ + _ g h b1 b2 1 4 5 8 a p d l t u note> *surface mounted on 1 ? 1 fr4 board, t ? 10sec. 1 2 3 4 8 7 6 5 s 1 g 1 s 2 g 2 d 1 d 1 d 2 d 2 1 2 3 4 8 7 6 5 kmb4d5dn 60qa pin connection (top view) characteristic symbol pating unit drain source voltage v dss 60 v gate source voltage v gss ? 20 v drain current dc@ta=25 ? i d * 4.5 a pulsed i dp 20 a drain source diode forward current i s 3 a drain power dissipation @ta=25 ? p d * 2 w maximum junction temperature t j 150 ? storage temperature range t stg -55~150 ? thermal resistance, junction to ambient r thja * 62.5 ? /w
2008. 5. 27 2/4 kmb4d5dn60qa revision no : 0 electrical characteristics (ta=25 ? ) unless otherwise noted characteristic symbol test condition min. typ. max. unit static drain-source breakdown voltage bv dss v gs =0v, i ds =250 a 60 - - v drain cut-off current i dss v gs =0v, v ds =48v - - 1 a gate leakage current i gss v gs = ? 20v, v ds =0v - - ? 100 na gate threshold voltage v th v ds =v gs, i d =250 a 1.0 - 3.0 v drain-source on resistance r ds(on) * v gs =10v, i d =4.5a - 46 56 m ? v gs =4.5v, i d =3a - 64 77 forward transconductance g fs * v ds =5v, i d =4.5a - 11 - s dynamic input capaclitance c iss * v ds =30v, v gs =0v, f=1mhz - 490 - pf ouput capacitance c oss * - 45 - reverse transfer capacitance c rss * - 25 - total gate charge v gs =10v q g * v ds =30v, v gs =10v, i d =4.5a - 10.4 - nc v gs =4.5v - 5.1 - gate-source charge q gs * - 2.3 - gate-drain charge q gd * - 2.2 - turn-on delay time t d(on) * v ds =30v, v gs =10v i d =4.5a, r g =3 ? - 12.4 - ns turn-on rise time t r * - 34.5 - turn-off delay time t d(off) * - 30.7 - turn-off fall time t f * - 5.0 - source-drain diode ratings source-drain forward voltage v sdf * v gs =0v, i s =1a - 0.7 1.0 v note> *pulse test : pulse width ? 300 k , duty cycle ? 2%
2008. 5. 27 3/4 kmb4d5dn60qa revision no : 0
2008. 5. 27 4/4 kmb4d5dn60qa revision no : 0
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